Estimating lateral straggling of impurity profiles of ions implanted into crystalline silicon
2001
We have developed an analytical model with lateral straggling parameters to describe the tilt dependence of ion-implantation profiles. We introduce three parameters associated with depth-dependent lateral straggling into the model. On the basis of comparison between experimental and analytical data, we have established a database of ion-implantation profiles that includes lateral-straggling parameters.
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