Temperature and illuminance detections by hybrid-type carrier-generation sensors using n-type and p-type poly-Si TFTs

We have evaluated temperature dependences of transistor characteristics in n-type and p-type poly-Si TFTs with and without visible light illumination. It is found that the temperature dependences of the off-leakage currents in the n-type and p-type TFTs are much larger than those of the on currents. Moreover, the temperature dependences change with visible light illumination, and the changes are different between the n-type and p-type poly-Si TFTs. Based on these results, we proposed a detection method to obtain simultaneously temperature and illuminance by hybrid-type carrier-generation sensors using n-type and p-type Poly-Si TFTs.