LiNbO/sub 3/ high speed travelling wave electro-optic waveguide devices

The fabrication of LiNbO/sub 3/ travelling wave electrodes can be considerably simplified if plasma etched Al electrodes are used in preference to the more conventional electro-plated Au electrodes. The performance of LiNbO/sub 3/ devices employing these electrode structures is reported and the reliability of this Al metallisation system considered. Finally the design and operation of a GaAs high speed drive amplifier which can be used to generate the high voltages required to modulate practical LiNbO/sub 3/ travelling wave devices, and thus simplify their operation, is reported and the use of this drive amplifier in a 1.8 Gbit s/sup -1/ optical fibre system is described. >