Extended Defects in O+-Implanted Si Layers and Their Luminescence

The structure and luminescence properties of Czochralski-grown n-Si samples implanted with oxygen ions have been comprehensively analyzed using photoluminescence and transmission electron microscopy (TEM). A high oxygen concentration (5 × 1019 cm–3) in a layer at a depth of 0.3–0.8 µm was obtained in the implanted material. The samples have been annealed according to the multistage technique, including low-temperature (650/800°C) and high-temperature (1000°C) stages, to obtain oxygen precipitates and a system of various extended defects. The structure of the dislocation-photoluminescence spectrum is determined by the features of interaction of dislocations with oxygen during annealing. It is established that decoration of dislocations with oxygen precipitates leads to quenching the D1 and D2 lines. The strong D1 line is due to “pure” (without oxygen precipitates) dislocations. Free amorphous oxygen precipitates emit at a wavelength of 1476 nm.