Fabrication of Ga2O3/Si direct bonding interface for high power device applications

The fabrication of Ga 2 O 3 (010)/Si(100) and Ga 2 O 3 (001)/Si(100) interfaces is achieved by the surface-activated bonding (SAB) of Ga 2 O 3 and Si substrates. The structure of the bonding interfaces is characterized by transmission electron microscope (TEM).