6-DOF Inertial Sensor Development with Advanced Fabrication Platform

In this paper, we present the development of 6-Degree-Of-Freedom (6-DOF) inertial sensors based on an advanced capacitive inertial sensor fabrication platform on 8-inch wafer. The reported platform integrates 3-axis gyroscopes and 3-axis accelerometers on the same chips. Wafer-level measurement results indicate that a fabrication yield of greater than 91% and a vacuum level of around 100 mTorr have been achieved across the wafer. The fabricated 6-DOF inertial sensors are hybrid integrated with the readout circuits with the sensing electronics, respectively. The system-level characterization results indicate the reported 6-DOF inertial sensors having good scale factor nonlinearities in the full dynamic ranges.