On the mechanism of polarized electroluminescence from light‐emitting structures based on GaN

Investigations of photoelectromotive force and photoconductivity are made in order to find the mechanism of electroluminescence in the GaN: (Zn, O) light-emitting structures. They enable to detect the existence of two channels of current flow in the structures investigated. One of them is a diode circuit with a potential barrier of ≈ 3 eV. This channel of conductivity is responsible for the unipolar electroluminescence with Emax ≈ 2.6 eV and with polarization degree up to ≈ 60%. The large value of the potential barrier height shows that gallium nitride may be of p-type conductivity. The analysis of the peculiarities of the growth and doping of GaN does not contradict this supposition. [Russian Text Ignored].