Electroluminescent device comprising a photoluminescent semiconductor layer structured

The invention relates to opto-electronic device (1) of light emission, comprising: - at least one light emitting diode (10) having an emitting surface (11); - a photoluminescent layer (30), which covers at least partially the emission surface comprising at least a first phosphor (Lc) adapted to absorb incident light radiation emitted by the light emitting diode and emitting in response to light radiation a first wavelength, and having at least one cavity (33i) formed from one face (32) of the photoluminescent layer opposite to the emission surface. At least one second phosphor (Li) is arranged within said cavity (33i), the second phosphor being adapted to absorb incident light radiation and transmitting in response a light radiation at a second wavelength different from the first length of wave.