Iii nitride semiconductor laser device, and a method of making iii nitride semiconductor laser device

The present embodiments provide a III-nitride semiconductor laser device with a laser cavity enabling a low threshold current, and a structure enabling improvement in lasing yield, on a semipolar plane of a support base inclined from the c-axis toward the m-axis of a hexagonal III-nitride. The first fractured face 27 and the second fractured face 29 intersect with the m-n plane. The III-nitride semiconductor laser device has the laser waveguide that extends in the direction of the intersection of the m-n plane with the semipolar plane t 7a. The first and second fractured faces 27 and 29 each extend from an edge 13c of the first surface 13a to an edge I3d of the second surface 13b. The first and second fractured faces 27 and 29, which are different from the conventional cleaved facets such as c-planes, m-planes, or a-planes, are not formed by dry-etching. An angle difference AV between the waveguide vector LGV and the projected component VCP can be in the range of not less than -0.5 degrees and not more than +0.5 degrees.