Variable I–V characteristics method applied to model the electrical behavior of an irradiated P–N junction. Extension to the junction in an irradiated transistor

Abstract The electrical behavior of a diode, either reverse or forward biased, under a radiation pulse, is considered. The variations of the current produced by the diode are explained by the consideration of variable I-V characteristics, showing the different diode behaviors according to the working mode. This approach is then applied to explain some electrical properties of an irradiated transistor.