Total Ionizing Dose Testing of SiGe 7HP discrete Heterojunction Bipolar Transistors for ELDRS Effects

Thirty discrete heterojunction bipolar transistors fabricated in IBM's SiGe 7HP process were irradiated at dose rates of 0.013 rad(Si)/s, 0.11 rad(Si)/s and 171 rad(Si)/s to determine their sensitivity to total-dose irradiation and dose-rate effects. All devices tested showed less than 4% change in beta 0.6% change in turn on voltage. In addition, there was no measurable enhancement of degradation due to low dose-rate irradiation.