Growth of MoS2 by controlled sulfurization of pulsed DC sputtered Mo thin films

Monolayer (ML) molybdenum disulfide (MoS2) is of great interest for the scientific community due to its attractive electronic, optoelectronic and mechanical properties. Synthesis of high quality and large size ML MoS2 at low cost is still a challenge. We report controlled plasma-assisted sulfurization of pulsed dc sputtered Mo films of different nominal thicknesses to fabricate large-area high-quality MoS2 sheets [thicknesses: 1, 2, 3, and 4 monolayers (MLs)] on SiO2/Si substrate. Raman Spectroscopy studies reveal the uniform and large-area formation of a monolayer of MoS2 which is desirable for real devices used in Optoelectronics as well as spintronics applications.