Series Resistance Extraction in Poly-Si TFTs With Channel Length and Mobility Variations

A new method to extract the series resistance ( R s ) of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) is proposed. Different from conventional methods, this method is based on an analytical poly-Si TFT model and is insensitive to channel length and mobility variations. This method is demonstrated in both n- and p-type poly-Si TFTs.