Epitaxial growth of high mobility Bi{sub 2}Se{sub 3} thin films on CdS

We report the experiment of high quality epitaxial growth of Bi{sub 2}Se{sub 3} thin films on hexagonal CdS (0001) substrates using a solid source molecular-beam epitaxy system. Layer-by-layer growth of single crystal Bi{sub 2}Se{sub 3} has been observed from the first quintuple layer. The size of surface triangular terraces has exceeded 1 {mu}m. Angle-resolved photoemission spectroscopy clearly reveals the presence of Dirac-cone-shape surface states. Magneto-transport measurements demonstrate a high Hall mobility of {approx}6000 cm{sup 2}/V s for the as-grown Bi{sub 2}Se{sub 3} thin films at temperatures below 30 K. These characteristics of Bi{sub 2}Se{sub 3} thin films promise a variety of potential applications in ultrafast, low-power dissipation devices.