Multi-MGy Radiation Hardened CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests

Vincent Goiffon,Franck Corbière,Sébastien Rolando,Magali Estribeau,Barbara Avon,Pierre Magnan,Jérémy Baer,Romain Molina,Aziouz Chabane,Paola Cervantes,Marc Gaillardin,Philippe Paillet,Claude Marcandella,Sylvain Girard

Multi-MGy Radiation Hardened CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests

2015

Vincent Goiffon
Franck Corbière
Sébastien Rolando
Magali Estribeau
Barbara Avon
Pierre Magnan
Jérémy Baer
Romain Molina
Aziouz Chabane
Paola Cervantes
Marc Gaillardin
Philippe Paillet
Claude Marcandella
Sylvain Girard

The radiation hardness of a radiation-hardened-by-design CMOS Image Sensor is validated up to several MGy(SiO2) (>100 Mrad) of TID. The perspectives in terms of further improvements and applications are discussed.

Keywords:

Ionizing radiation
Radiation hardening
Radiation
Image sensor
Absorbed dose
CMOS
Gamma ray
Electronic engineering
Gray (unit)
Materials science
Optics
Radiation damage

Correction
Source
Cite
Save
Machine Reading By IdeaReader

References

Citations