PECVD and plasma etching at atmospheric pressure by means of a linearly-extended DC arc plasma source

Plasma processes are applied for a variety of surface modifications. Examples of this are coatings to achieve improved corrosion and scratch protection, or surface cleaning and texturing. However, since these processes usually take place in a vacuum, they are unfortunately not applicable for industrial use on a large scale. Plasma-enhanced CVD processes at atmospheric pressure enable the deposition of functional coatings on components and semi-finished parts within a continuous air-to-air process without the use of expensive vacuum systems. Their integration into in-line production processes definitely reduces substrate handling and coating costs. A thermal plasma source, based on a linearly-extended DC arc discharge at atmospheric pressure, has been tested for the deposition of silicon nitride at substrate temperatures below 300 C in a continuous PECVD process. Furthermore, this source has been tested for plasma-chemical etching and texturing of silicon as well.