Nitride thin film structure and method of forming the same

The present invention relates to a nitride thin film structure and a method. When forming a nitride thin film on a substrate other than the nitride causing the number of defects by a difference in lattice constant between the substrate and the nitride thin film. In addition, there is a problem in a substrate is bent by the thermal expansion coefficient difference between the substrate and the nitride thin film. In the present invention, in order to solve the above problem, a hollow empty particles, that is applied to the hollow structure on a substrate in the following we propose a thin-film structure and a method for forming a nitride thin film is grown thereon. According to the invention, the light-emitting element such as a thin film structure according to the invention and the LED in accordance with the it is possible to obtain the ELO (Epitaxial Lateral Overgrowth) effect of the hollow structure can form a high-quality nitride film, the refractive index in the thin film structure regulated to the effect that the light extraction efficiency increases when building. In addition, when the thermal expansion coefficient of the substrate larger than the nitride thin film has reduced the overall stress of the nitride thin film in accordance with the hollow structure compressed in the nitride thin film has an effect of preventing the warpage of the substrate.