Reply to "Comment on 'Spin splitting in modulation-doped AlxGa1xN / GaN heterostructures' "

Tang et al. commented on our paper1 that the beating Shubnikov–de Haas SdH oscillations we observed in AlxGa1−xN/GaN heterostructures might originate from magnetointersubband scattering MIS instead of zero-field spin splitting. To support their argument, they pointed out that i a second-subband population with SdH oscillation frequency 16.7 T might exist in sample 3, ii the theoretical calculation in wurtzite GaN was still not available, iii the phase difference between SdH and MIS oscillations was equal to , and iv the amplitude of the beating pattern induced by the MIS effect was determined by AMIS sin , where = EF−E2 / c. In order to examine the accurate phases for the individual SdH oscillations, we applied the nonlinear curve-fitting technique to the original data in Fig. 3 of Ref. 1. After the removal of the background noise signal nonoscillating signal , the oscillatory resistivity osc B was fitted to the superposition of two independent cosine functions,2