Low-energy ion emission from a xenon gas-puff laser-plasma X-ray source

We have measured low-energy ion emission from a gas-puff laser-plasma X-ray source. The ions may cause the degradation of the condenser mirror of the extreme ultra-violet projection lithography system. A 0.7 J in 8 ns Nd:YAG laser at 1.06 μm was focused onto the xenon gas-puff target with an intensity of ∼1012 W/cm2. The silicon (111) plates, placed at a distance of 32 mm from the laser-interaction region, were exposed with the xenon ions. The average ion energy was measured to be less than 50 eV with a Faraday-cup detector placed close to the silicon plates. The xenon deposition occurred in the silicon plates with a depth of less than 40 nm. The deposition density was measured with a quadrupole secondary ion mass spectrometer to be 1021 /cm3 after 1500 laser shots. The energy-conversion efficiency from the laser energy into the ions is ∼0.1%/4 π sr/shot. For the lithography system, if we can remove such ion bombardment completely using novel techniques such as electro-magnetic devices or gas flow curtain techniques, the lifetime of the condenser mirror will be extended significantly.