Thermal oxidation of cleft surface of InSe single crystal

Abstract The thermal oxidation processes of cleft surface of InSe single crystals in the temperature range from 200 to 615°C have been investigated. We used the cathodoluminescence and X-ray diffraction methods. We established that adsorption processes were activated and defect creation on the cleft InSe surface begun at the low temperatures. The formation of In 2 Se 3 and In 2 (SeO 4 ) 3 phases took place at medium temperatures. In 2 O 3 phase was formed at high temperatures. Results are in good agreement with the In–Se–O phase diagram that generally includes the In 2 (SeO 4 ) 3 phase formation.