Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions

The synthesis and characterization of a novel, low cost, amorphous wide-bandgap semiconductor via X-ray induced decomposition of strontium oxalate at high pressure have been demonstrated. By means of IR spectroscopy, the final product is identified as a mixture of strontium carbonate, strontium oxalate and CO-derived materials. Band gap measurements demonstrate that the final product exhibits a much lower band gap (2.45 eV) than the initial strontium oxalate powder (4.07 eV), suggesting that the synthesized material can be highly useful in electronic and optical applications.