Controllable growth of continuous monolayer MoS2 by balancing the moles of gaseous precursor via argon flow

Large-area, uniform, and high quality continuous monolayer MoS2 was successfully grown on the SiO2/Si substrate, demonstrated using diverse analytical testing techniques. To achieve reproducible success, we discuss the influence of carrier gas flow on MoS2 growth in detail. Based on the results of the discussion, we present the possible deposition mechanism and the growth process of continuous monolayer MoS2. Back-gated field effect transistors (FETs) based on an in-situ, as-grown monolayer MoS2 film showed a carrier mobility of ~9.8 cm2V-1s-1 and an Ion/Ioff of ~3.1 × 106. These values offer insight into the potential applications of monolayer MoS2 in microelectronics and photoelectronics. Our results reveal that the controllable preparation of high quality continuous monolayer MoS2, or other ultrathin 2D materials, can be achieved via optimisation and adjustment of the carrier gas flow.