A large sample goniometer for use in Rutherford backscattering channeling measurements

Abstract A vacuum goniometer has been constructed for use in Rutherford backscattering and channeling measurements, specifically to profile the surface structure of 50 mm diameter silicon wafers implanted with phosphorus or antimony for solar cell studies. The device has three rotational degrees of freedom and two orthogonal translations within these rotations, and uses a system of intermittent coupling to engage each of the translations in turn.