High K LAON for gate dielectric application

A promising high k material, lanthanum aluminum oxynitride (LAON), with excellent material and electronic properties is reported. The LAON film has good thermal stability and CMOS process compatibility at 1000 C. The LAON material has a dielectric constant of above 20, bandgap of 6.6 eV. Well-behaved I-V and C-V were obtained for 80 A LAON on silicon.