Chemical beam epitaxial selective growth of InP for laser fabrication

Chemical beam epitaxy (CBE) is demonstrated here to be a suitable technique for the planarization of etched structures by selective overgrowth of InP layers. We present the fabrication of planar buried heterostructure laser diodes (PBH‐LDs) with a separate confinement multiquantum well active layer grown by gas source molecular beam epitaxy and p‐n InP current blocking layers grown by CBE. These lasers have been operated cw showing threshold current as low as 17 mA and maximum power up to 25 mW. We also achieved for the first time the fabrication of PBH‐LD using molecular beam epitaxy techniques only.