Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors
1995
Pseudomorphic high-electron mobility transistors have been found to undergo hot-electron-induced degradation. Due to the negative temperature dependence of hot-electron effects, it will be necessary to conduct electrical and temperature stress tests separately, in order to ascertain the reliability of these transistors under normal operating conditions. >
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
3
References
33
Citations
NaN
KQI