Quasi-one-dimensional nanometer resistive random access memory and preparation method based on chalcogen cuprous compounds

The invention discloses a quasi-one-dimensional nanometer resistive random access memory and a preparation method based on chalcogen cuprous compounds. The method comprises the following steps: firstly, uniformly dispersing a chalcogen cuprous compound quasi-one-dimensional nanometer structure on an insulation substrate ; evaporation plating a metal Cu electrode at one end of the chalcogen cuprous compound quasi-one-dimensional nanometer structure through the one-time ultraviolet exposure photoetching and the electron beam evaporation; evaporation plating an inert metal electrode at the other end of the chalcogen cuprous compound quasi-one-dimensional nanometer structure through the second-time positioning ultraviolet exposure photoetching and the electron beam evaporation. According to the invention, the chalcogen cuprous compound quasi-one-dimensional nanometer structure is applied to the nanometer memory for the first time, the performance is stable and reliable, the power consumption is low, the preparation method is simple and feasible, and the quasi-one-dimensional nanometer resistive random access memory is hopeful to be applied to a novel nanometer electronic device as a high-density storage unit.