Current–voltage characterizations and photovoltaic properties of Se80Te15Ge5/p-Si heterojunction

Thin films of Se80Te15Ge5 were prepared by thermal evaporation technique onto a single-crystal p-Si substrate, and Au/Se80Te15Ge5/p-Si/Al heterojunction was obtained. The current–voltage characteristics of the junction in dark were evaluated in temperature range of 303–343 K and the voltage applied ranged from − 2 to + 2 V. It was found that the junction exhibits diode behavior with calculation for some diode parameters as rectification ratio, ideality factor(m), series resistance (Rs) and shunt resistance (Rsh). From the I–V characteristic curves of Au/Se80Te15Ge5/p-Si/Al, the operating mechanism was examined in both forward and reverse directions of the junction. The photovoltaic properties of the Au/Se80Te15Ge5/p-Si/Al under illumination of white light were investigated. The efficiency of the cell estimated and has a value of 3.68.