Direct detecting of dynamic floating-body effects in SOI circuits by backside electron beam testing

It is demonstrated that the dynamic floating-body effects in SOI circuits can be detected directly by backside electron beam (EB) testing. Using the present technique, we have determined the actual body potential waveform during dynamic operation and confirmed that 0.35/spl mu/m field-shield SOI CMOS devices provide stable-operation while keeping such merits of SOI as quicker switching.