GaN membrane-supported UV photodetectors manufactured using nanolithographic processes

Membrane GaN metal-semiconductor-metal (MSM) photodetector structures using nanolithographic techniques have been manufactured for the first time. Very low dark currents and unexpected high values for the responsivity have been obtained. It seems that the membrane together with the (submicronic) MSM structure increase the gain of the structure and responsivities in the range of 50-100A/W can be obtained.