Bipolar transistor with improved break voltage of collector-based open emitter (BVcbc) and production process thereof

The invention discloses a bipolar transistor with improved break voltage of collector-based open emitter (BVcbc) and a production process thereof. The groove field oxidation isolation technology is combined with the junction terminal technology, the groove field oxidation process is divided into two steps, junction terminal boron ion implantation is performed between the two field oxidation steps, and therefore the reasonable junction terminal boron junction depth can be obtained and the technological process is simplified. A junction terminal boron ion implantation window is not needed to be aligned with the groove edge so that the fixed boron doping concentration can be obtained at the junction position of junction terminals and a groove, and the stable BVcbc can be obtained. The BVcbc of NPN silicon bipolar microwave power transistor devices produced through the production process is improved to be above 20V, high output power can be provided, collector junction stray capacitance is reduced, and the device high-frequency performance is ensured.