Photoluminescence properties of a Si doped InGaAs/InGaAlAs superlattice

In this paper, the optical properties of a Si doped In0.53Ga0.47As/In0.52Ga0.24 Al0.24As superlattice (SL) are investigated by using the photoluminescence (PL) technique in the temperature range of 9?300?K. The origins of the optical transitions observed in the spectra are attributed through the analysis of the transition behaviour with temperature and excitation power. The linewidths obtained at 9 and 300?K are smaller than those previously reported in the literature, and the blueshift observed with increasing temperature has a small magnitude, indicating the excellent quality of the sample. The experimental results are compared with theoretical calculations based on the envelope function formalism, with an excellent accordance. The excitonic emission was obtained in the range of 9?300?K, and the applicability of the Varshni, Vi?a, and P?ssler (p-type and ?-type) models, usually used to describe the variation of the excitonic energy transition as a function of temperature in semiconductor materials, was also analysed.