Etude de la gravure des grilles de silicium polycristallin dans un réacteur decr

Polysilicon etching is a critical process for VLSI. Since geometries are reduced, it becomes fundamental to achieve anisotropic profiles, with small linewidth variation in comparison with the resist dimensions. In the case of advanced technologies, the oxide thickness decreases down to 100 A and process selectivities should be greater than 30:1. The experiments were carried out in a DECR (Alcatel RCE 160) with Cl 2 and HBr chemistries