Insights into charge transition within band structure of amorphous SiCNO ceramic

Abstract SiCNO ceramic is prepared by pyrolyzing modified polysilazane. Its microstructure feature, dielectric properties and charge transition mechanisms are studied based on the analysis of effects of pyrolysis temperature on AC electrical performance. The Tauc band and the energy states density at Fermi level are studied by ultraviolet absorption and dielectric tests. The charge transition in the silicon-based matrix was analyzed according to Jonscher's dielectric relaxation theory. Results show that SiCNO ceramic obtained at 1000–1300 °C is amorphous with chemical stability. Three types of charge transition, that is, excitation from deep traps into the delocalized bands and the corresponding reverse capture processes, hopping near the Fermi level, and localized hopping of an electron in a potential double well, are enhanced as annealing temperature increases, which occur within energy band of Si-based matrix.