Laser three-dimensional imaging device and manufacturing method therefor

The invention discloses a laser three-dimensional imaging device and a manufacturing method therefor. The method comprises the steps: providing a first semiconductor wafer; etching the first semiconductor wafer, and forming a contact hole in the substrate; filling the contact hole, and forming a metal connection line on the contact hole; forming dielectric layers on the contact hole, the metal connection line, an APD, and the substrate; forming glass layers on the dielectric layers; grinding the back surface of the first semiconductor wafer till the bottom of the contact hole is exposed; forming a doping region on the back surface of the first semiconductor wafer; forming an interconnection electrode interconnected with the doping region; providing a second semiconductor wafer, wherein the second semiconductor wafer comprises a CMOS circuit and a metal layer; stacking the first semiconductor wafer and the second semiconductor wafer oppositely, and enabling the metal layer of the second semiconductor wafer and the interconnection electrode on the back surface of the first semiconductor wafer to be correspondingly bonded. According to the invention, a three-dimensional APD array and a CMOS pixel in-situ signal amplifier are longitudinally integrated as a device, thereby remarkably reducing the circuit area.