80 GHz DISTRIBUTED AMPLIFIERS *WITH BIPOLAR TRANSISTORS TRANSFERRED-SUBSTRATE HETERO JUNCTION

We report distributed amplifiers with 80 GHz bandwidth? 6.7 dB gain and -70 GHz bandwidth, 7.7 dB gain. These amplifiers were fabricated in the transferred-substrate heterojunction bipolar transistor integrated circuit technology. Transferred-substrate HBTs have very high fmaz (>400 GHz) and have yielded distributed amplifiers with record gain-bandwidth product.