Si-nanostructures formation in amorphous silicon nitride SiNx:H deposited by remote PECVD

Abstract The formation of silicon nanoclusters embedded in amorphous silicon nitride (SiN x :H) can be of great interest for optoelectronic devices such as solar cells. Here amorphous SiN x :H layers have been deposited by remote microwave-assisted chemical vapor deposition at 300 °C substrate temperature and with different ammonia [NH 3 ]/silane [SiH 4 ] gas flow ratios ( R =0.5−5). Post-thermal annealing was carried out at 700 °C during 30 min to form the silicon nanoclusters. The composition of the layers was determined by Rutherford back scattering (RBS) and elastic recoil detection analysis (ERDA). Fourier transform infrared spectroscopy (FTIR) showed that the densities of Si H (2160 cm −1 ) and N H (3330 cm −1 ) molecules are reduced after thermal annealing for SiN:H films deposited at flow gas ratio R >1.5. Breaking the Si H bonding provide Si atoms in excess in the bulk of the layer, which can nucleate and form Si nanostructures. The analysis of the photoluminescence (PL) spectra for different stoichiometric layers showed a strong dependence of the peak characteristics (position, intensity, etc.) on the gas flow ratio. On the other hand, transmission electron microscopy (TEM) analysis proves the presence of silicon nanoclusters embedded in the films deposited at a gas flow ratio of R =2 and annealed at 700 °C (30 min).