Characterisation of Device Grade Soi Structures formed by Implantation of High Doses of Oxygen

SOI structures have been formed in (100) silicon by implanting 400 keV molecular oxygen to a dose of l.8×l0 18 O atoms cm −2 . These samples were annealed at 1150°C for 2 hours with a SILOX cap. Oxygen depth profiles have been determined by SIMS and wafers implanted at about 500°C have been characterized by studying the regrowth kinetics, As drive in and oxidation rate in the top silicon overlay.