High temperature measurements of diamond thin films

Abstract Annealing at 1573 K of boron-implanted polycrystalline diamond films on silicon substrates introduces spurious effects originating from the shunt of the implanted layer by the substrate. The shunt resistance is dominated by the resistance to reach the substrate from the implanted region. It is ascribed to the grain boundaries of polycrystalline diamond. After the removal of the substrate, the electrical resistance of the implanted layer exhibits the expected behaviour for donor compensation. However, the higher activation energy for the high temperature resistance of the implanted layer requires the introduction of the partial ionization of the donor in this range of temperature and a high degeneracy factor g d = 1000 for the donor level.