Novel high-area-efficiency and low-triggering silicon controlled

The invention discloses a novel high-area-efficiency and low-triggering silicon controlled. The novel high-area-efficiency and low-triggering silicon controlled comprises a P type substrate, an N trap, a P trap, a P injection domain, a polysilicon gate, a shallow-trench isolator, a cathode and an anode; the N trap comprises a first N trap and a second N trap; the N injection domain comprises a first N injection area and a second N injection domain; the first N trap, the P trap and the second N trap are sequentially transversely arranged on the P type substrate; the P injection domain is arranged on the first N trap; the first N injection domain is arranged cross the first N trap and the P trap; the second N injection domain is arranged cross the P trap and the second N trap; the polysilicon gate is arranged on the P trap; the P injection domain is connected with the anode; the polysilicon gate and the second N injection domain are connected with the cathode. According to the novel high-area-efficiency and low-triggering silicon controlled, the P injection domain, the first N trap, the P trap and the second N injection domain are used to achieve a silicon controlled path, so that the area efficiency is high; the whole protection device is simple in structure, stable and reliable.