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Integration and electrical evaluation of Epi-Si and Epi-SiGe channels for 3D NAND memory applications
Integration and electrical evaluation of Epi-Si and Epi-SiGe channels for 3D NAND memory applications
2015
E. Capogreco
Robin Degraeve
J. G. Lisoni
Vu Luong
A. Arreghini
Maria Toledano Luque
Andriy Hikavyy
Toshinori Numata
Kristin De Meyer
Geert Van den bosch
Jan Van Houdt
Keywords:
Computer science
Electronic engineering
Electrical Evaluation
NAND gate
Communication channel
Correction
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