Low‐temperature organometallic vapor phase epitaxy of InSb using the novel Sb precursor triisopropylantimony

InSb has been grown by organometallic vapor phase epitaxy using triisopropylantimony (TIPSb) and trimethylindium (TMIn) at temperatures as low as 300 °C, the lowest yet reported for a stable Sb source. Unintentionally doped films were n type, and the best electronic transport result was obtained for a growth at 350 °C yielding a 77 K carrier concentration of 3.7×1016 cm−3 and mobility of 6.3×104 cm2/V s; these impurities are thought to be from the reagent grade chemicals used to synthesize the TIPSb. The morphology, growth rate, and transport properties of these films are reported as a function of growth temperature, molar ratios, and substrate (GaAs or InSb). By comparing these transport properties with Hall measurements of ∼1 μm InSb epilayers on GaAs grown from trimethylantimony and TMIn, it was found that these properties were greatly improved because of the low‐temperature epitaxy enabled by this source.