Atom probe tomography quantification of carbon in silicon.

Abstract Atom Probe Tomography (APT) was used to quantify carbon in implanted silicon at two various electric fields (~ 15 and 20 V/nm). Using equal proportions of implanted 12C and 13C, the numerous molecular ions that were observed were identified and their contribution to the carbon content statistically derived. Much more accurate carbon quantification was obtained in the lowest electric field analysis by comparing APT with Secondary Ion Mass Spectroscopy profiles. This was assigned to a lower amount of molecular ion dissociations. Furthermore, the number of self-interstitials trapped per carbon atom in clusters was derived. This value of interest for the microelectronics industry regarding dopant diffusion and implantation induced defects was estimated close to one, in agreement with the expected stoichiometry of the SiC phase present in the phase diagram. However, this was obtained only when using low electric field conditions.