Si-doped diamond films prepared by chemical vapour deposition

Abstract The effects of Si doping on morphology, components and structure characteristics of CVD diamond films were studied. Si-doped CVD diamond films were deposited on Si substrate by adding tetraethoxysilane (TEOS) into acetone as source of reactant gas. The morphology and microstructure of diamond films were characterized by scanning electron microcopy (SEM). The crystalline quality of diamond films was studied by Raman spectroscopy and X-ray diffractometry (XRD). The surface roughness of the films was evaluated with surface profilometer. The results suggest that Si doping tends to reduce the crystallite size, enhance grain refinement and inhibit the appearance of (111) facets. Raman spectra indicate that Si doping can enhance the formation of sp 2 phase in diamond films. Moreover, Raman signal of SiC was detected, which suggests the existence of Si in the diamond films. Smooth fine-grained diamond (SFGD) film was synthesized at Si to C ratio of 1%.