The Hartman effect in monolayer graphene with Rashba spin–orbit interaction

Abstract In this paper, the Hartman effect is investigated in electron tunneling through a barrier on the graphene channel in the presence of Rashba spin orbit interaction (RSOI). Two cases of normal and ferromagnetic channel are considered. The calculated results indicate that the occurrence of the Hartman effect in tunneling process depends strongly on Rashba SOI parameter, incidence angle, energy of the carriers and the ferromagnetic exchange energy of the leads.