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Single gate 0.15 m CMOS devices fabricated using RTCVD in-situ boron doped Si1-xGex gates
Single gate 0.15 m CMOS devices fabricated using RTCVD in-situ boron doped Si1-xGex gates
1997
V.Z.-Q. Li
M. R. Mirabedini
R. T. Kuehn
J. J. Wortman
Mehmet C. Öztürk
Keywords:
Boron
Doping
Threshold voltage
CMOS
Electronic engineering
Materials science
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