Au:Ga Alloyed Clusters to Enhance Al Contacts to P-type GaN
2018
Deposition, annealing, and subsequent removal of Au on p-type GaN films reduced the resistivity of subsequently deposited Al metal contacts. The reduction is explained by formation of Au:Ga alloys which remove Ga from the surface, and create Ga-vacancies that surround the electrically active alloy clusters.
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