Anisotropic Electron Transport in Pseudomorphic InGaAs Channels and its Structural Origin

Electron transport measurements performed at 1.6K on InxGa1−xAs (x=0.2 and x=0.3) pHEMT wafers have consistently shown the electron transport mobility to be higher in the [011] direction than in the [011] direction. Cross‐sectional TEM imaging of the materials suggests that this is related to scattering from anisotropic thickness modulations in the channel. Quantitative estimates suggest additional scattering from In concentration fluctuations is also likely.