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Ultra-thin TiN/Ta2O5/W capacitor technology for 1 Gbit DRAM
Ultra-thin TiN/Ta2O5/W capacitor technology for 1 Gbit DRAM
1993
Satoshi Kamiyama
Hiroyoshi Suzuki
Hiroshi Watanabe
Atsushi Sakai
Makiko Oshida
Tetsuya Tatsumi
Takashi Tanigawa
Naoki Kasai
Atsuyuki Ishitani
Keywords:
Capacitor
Leakage (electronics)
Gigabit
Tin
Electronic engineering
Materials science
Dram
Correction
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