Study of thermal oxidation and nitrogen annealing of luminescent porous silicon

The properties of thermally oxidized porous Si were studied by Fourier‐transform infrared spectroscopy and secondary ion mass spectroscopy. The results show that residual hydrogen exists in the 1000 °C/10 min thermally oxidized porous Si film in the form of SiOH bonds. The removal of these hydrogen atoms by annealing at 1000 °C in N2 reduces the photoluminescence.